Structural Analysis of Buried Amorphous Layer in Oxygen-Ion-Implanted Silicon Carbide
نویسندگان
چکیده
منابع مشابه
Effect of oxygen concentration on nanoindentation-induced phase transformations in ion-implanted amorphous silicon
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ژورنال
عنوان ژورنال: Journal of the Japan Institute of Metals and Materials
سال: 2001
ISSN: 0021-4876,1880-6880
DOI: 10.2320/jinstmet1952.65.5_361